Provided is an operation method which can be applied to a PRAM, an ReRAM, or a solid electrolyte memory which contain error correction codes, each formed by a plurality of symbols, each formed by a plurality of bits and which can perform an error correction in a symbol unit.
An MRAM operation method stores, in a memory array, error correction codes each formed by a plurality of symbols, each symbol consisting of a plurality of bits, and correctable on symbol unit.
TOKYO-Toshiba Corporation (TOKYO: 6502) today announced the development of BENANDTM, a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). BENAND's diverse applications include LCD TVs and digital cameras along with robots and other industrial applications.
Other features, such as embedded error-correction code and an on-chip bad-block management utility, improve the data integrity of the Flash memory and meet code-storage requirements.
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