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surface modification layer
Traducere "surface modification layer" în chineză
表面改性层
Modification 7 (an example with a surface modification layer in a planarization film)
改型7（平面化薄膜中具有表面改性层的示例）
The method according to (19), wherein the surface modification layer is formed by adding a modifier to the resin material, and then drying the resultant at a temperature of 100 degrees or lower.
根据（19）所述的方法，其中，所述表面改性层通过在树脂材料中添加改性剂，并在100度或以下的温度下干燥生成物而形成。
The semiconductor device according to claim 11, wherein the surface modification layer includes one of a silicone-based oligomer and a fluorine-containing oligomer that each function as a modifier.
根据权利要求11所述的半导体装置，其特征在于，所述表面改性层包括分别作为改性剂的硅酮基低聚物和含氟低聚物的其中之一。
The semiconductor device according to claim 11, wherein the surface modification layer has flatness that is higher than flatness of the resin material.
根据权利要求11所述的半导体装置，其特征在于，所述表面改性层的平整度高于树脂材料的平整度。
Fourth Embodiment (an example of a top-gate type transistor with a surface modification layer in an inter-layer insulating film
第四实施例（层间绝缘薄膜中具有表面改性层的顶栅型晶体管的示例：
Moreover, according to the second semiconductor device, the method of manufacturing the semiconductor device, the second display unit, and the second electronic apparatus of the embodiments of the present technology, the insulating film is covered with the surface modification layer. Therefore, moisture intrusion into the oxide semiconductor film is reduced. Therefore, the TFT characteristics of the transistor are improved.
另外，根据本技术的实施例的第二半导体装置、半导体装置制造方法、第二显示单元和第二电子设备，所述绝缘薄膜覆盖有表面改性层。因此，减少了水分在氧化物半导体薄膜中的渗透。因此，提高了晶体管的TFT特性。
The surface modification layer 1016B preferably has flatness (smoothness) higher than that of the resin material included in the resin layer 1016A. One reason for this is that the flat inter-layer insulating film 1016 provides uniform TFT characteristics in a plane of the substrate 1011 and provides uniform image quality.
所述表面改性层1016B的平整度（平滑度）优选高于树脂层1016A中包括的树脂材料的平整度。一个原因在于，平整的层间绝缘薄膜1016在衬底1011的平面中提供均匀的TFT特性，并提供均匀的图像质量。
A transistor (transistor 1010) that includes a surface modification layer (surface modification layer 1016B) in an inter-layer insulating film (inter-layer insulating film 1016) was fabricated and thermal decomposition temperature and pure water contact angle of the inter-layer insulating film and reliability of the transistor were measured in a manner similar to that in Examples 3-1 and 3-2. Example 4-1 used polyimide as the resin material and used a fluorine-containing oligomer A as the modifier, Example 4-2 used polyimide as the resin material and used a fluorine-containing oligomer B as the modifier, and Example 4-3 used an acrylic-based resin as the resin material and used a silicone-based oligomer as the modifier, to form the inter-layer insulating film. RS-72-K (available from DIC Corporation) was used as the fluorine-containing oligomer A, F555 (available from DIC Corporation) was used as the fluorine-containing oligomer B, and EB350 (available from Daicel Corporation) was used as the silicone-based oligomer.
制造了在层间绝缘薄膜（层间绝缘薄膜1016）中包括表面改性层（表面改性层1016B）的晶体管（晶体管1010），并以与示例3-1和3-2相似的方式测量了层间绝缘薄膜的热分解温度和纯水接触角以及晶体管的可靠性。示例4-1使用聚酰亚胺作为树脂材料，使用含氟低聚物A作为改性剂，示例4-2使用聚酰亚胺作为树脂材料，使用含氟低聚物B作为改性剂，示例4-3使用丙烯酸基树脂作为树脂材料，使用硅酮基低聚物作为改性剂，以形成层间绝缘薄膜。使用RS-72-K（由日本迪爱生株式会社生产）作为含氟低聚物A，使用F555（由日本迪爱生株式会社生产）作为含氟低聚物B，使用EB350（由日本株式会社大赛璐生产）作为硅酮基低聚物。
On the other hand, in the display unit 1001, the resin layer 1016A formed mainly of a resin material such as polyimide is covered with the surface modification layer 1016B with higher hydrophobicity. As a result, moisture in the atmosphere and in the upper layers is repelled by the surface modification layer 1016B. The oxide semiconductor film 1012 is covered with the inter-layer insulating film 1016 that includes the above-described surface modification layer 1016B. Therefore, moisture intrusion into the oxide semiconductor film 1012 is suppressed, and TFT characteristics, in particular, reliability is improved in the transistor 1010.
另一方面，在显示单元1001中，主要由聚酰亚胺等树脂材料构成的树脂层1016A覆盖有具有较高疏水性的表面改性层1016B。因此，大气中和上层中存在的水分被表面改性层1016B排斥。所述氧化物半导体薄膜1012覆盖有包括上述表面改性层1016B的层间绝缘薄膜1016。因此，抑制了水分到氧化物半导体薄膜1012中的渗透，提高了晶体管1010的TFT特性，特别提高了其可靠性。
The inter-layer insulating film 1016 includes a resin layer 1016A and the surface modification layer 1016B. The surface modification layer 1016B covers a surface of the resin layer 1016A. The resin layer 1016A may include, for example, a resin material such as polyimide, acrylic-based resins, novolac-based resins, phenol-based resins, polyester-based resins, epoxy-based resins, vinyl-chloride-based resins, polybenzimidazole-based resins, polysiloxane (silicone resin), polyolefin-based resins, polyethylene-based resins, and polystyrene-based resins. In particular, polyimide, acrylic-based resins, and polysiloxane are superior in terms of heat resistance and of cost. The resin layer 1016A may be formed of an organic inorganic hybrid resin.
所述层间绝缘薄膜1016包括树脂层1016A和表面改性层1016B。所述表面改性层1016B覆盖树脂层1016A的表面。所述树脂层1016A可包括（例如）聚酰亚胺、丙烯酸基树脂、酚醛基树脂、苯酚基树脂、聚酯基树脂、环氧基树脂、氯乙烯基树脂、聚苯并咪唑基树脂、聚硅氧烷（硅树脂）、聚烯烃基树脂、聚乙烯基树脂和聚苯乙烯基树脂等树脂材料。特别地，聚酰亚胺、丙烯酸基树脂和聚硅氧烷在耐热性和成本方面较为有利。所述树脂层1016A可由有机无机混合树脂构成。
an insulating film covering the oxide semiconductor film and including a resin material, the insulating film being covered with a surface modification layer that has hydrophobicity that is higher than hydrophobicity of the resin material.
绝缘薄膜，覆盖氧化物半导体薄膜并包括树脂材料，所述绝缘薄膜覆盖有表面改性层，表面改性层的疏水性高于树脂材料的疏水性。
a transistor including an oxide semiconductor film; and an insulating film covering the oxide semiconductor film and including a resin material, the insulating film being covered with a surface modification layer that has hydrophobicity that is higher than hydrophobicity of the resin material.
晶体管，包括氧化物半导体薄膜；以及，绝缘薄膜，覆盖氧化物半导体薄膜并包括树脂材料，所述绝缘薄膜覆盖有表面改性层，表面改性层的疏水性高于树脂材料的疏水性。
The semiconductor device according to (7), wherein concentration of the modifier included in an inner part of the insulating film is lower than concentration of the modifier included in the surface modification layer.
根据（7）所述的半导体装置，其中，绝缘薄膜的内部中包括的改性剂的浓度低于表面改性层中包括的改性剂的浓度。
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