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resist pattern using same
Exemple pentru "resist pattern using same"
RINSE LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING SAME
リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
SILANE COMPOSITION AND CURED FILM THEREOF, AND METHOD FOR FORMING NEGATIVE RESIST PATTERN USING SAME
MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME
レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
MATERIAL FOR THICKENING RESIST PATTERN, METHOD FOR PRODUCING RESIST PATTERN USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
レジストパターン厚肉化材料、それを用いたレジストパターンの製造方法及び半導体装置の製造方法
RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS POLYMER PHOTOACID GENERATOR, AND METHOD FOR FORMING RESIST PATTERN USING SAME
ポリマー型の光酸発生剤を含有するレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
Alte rezultate
Provided are a radiation-sensitive resin composition, from which a chemically amplified resist showing reduced line width roughness and ensuring the formation of a desired pattern shape at a high accuracy can be obtained, and a method for forming a resist pattern using the same.
本発明の課題は、ライン幅のばらつきの発生を抑制して、所望形状のパターンを精度良く形成することのできる化学増幅型レジストを与える感放射線性樹脂組成物及びそれを用いたレジストパターン形成方法を提供することである。
RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING SAME
レジストパターンコーティング剤及びそれを用いるレジストパターン形成方法
ALICYCLIC COMPOUND, METHOD FOR MANUFACTURING SAME, COMPOSITION CONTAINING SAME AND RESIST PATTERN FORMATION METHOD USING SAME
脂環式化合物、その製造方法、それを含む組成物及びそれを用いたレジストパターン形成方法
PATTERN-FORMING METHOD, RESIST PATTERN FORMED USING SAME, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME AND ELECTRONIC DEVICE
COMPOSITION FOR FORMING UPPER LAYER FILM AND RESIST PATTERN FORMING METHOD USING SAME
NEGATIVE RESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD USING THE SAME
ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法
This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and, at the same time, can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern, and a method for resist pattern formation using the same.
ホトレジストパターンについて、製品の品質をそこなうことなく、その表面欠陥、いわゆるディフェクトを減少させ、また電子線照射に対する耐性を付与して、レジストパターンの収縮を抑制するために用いられる新規なリソグラフィー用リンス液、及びそれを用いたレジストパターン形成方法を提供する。
Disclosed are an alicyclic compound in which a cholic acid ester structure-containing group is bound to an adamantane skeleton, method for manufacturing the same, composition containing the same, and resist pattern formation method using the same, that provide an alicyclic compound which has superior solvent properties, light exposure sensitivity, resolution, roughness, and heat resistance, etc., and especially excellent dissolution inhibiting effect against development fluids, and is useful as a positive photoresist monomer or dissolution inhibitor used in semiconductor device fabrication, and that provide a method for manufacturing the same, composition containing the same, and resist pattern formation method using the same.
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Rezultate: 3292. Exacte: 5. Timp de răspuns: 65 ms.
