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Appleton layer
Definition
Translation of "Appleton layer" in Chinese
DefinitionOther results
◆ Both CM & CPE could choose working mode at layer2, layer3 and even mixed mode of layer 2 & layer 3
◆CM 和CPE 可选择二层、三层和二三层混合工作模式
It is to be noted that the laser light absorption layer 3 may have a thickness large enough to enable later performance of all laser beam processing, and can have a thickness selected as appropriate based upon this premise.
而且，激光吸收层3具有使得其后的全部激光束加工得以实施的厚度即可，在这个前提下，其可以具有适宜选择的厚度。
Furthermore, in the mode-locked semiconductor laser device with the first configuration or the second configuration including the above-described preferred form, the second electrode may be constituted by a laminate structure of palladium layer/ platinum layer where a palladium (Pd) single layer, a nickel (Ni) single layer, a platinum (Pt) single layer, and a palladium layer come into contact with the second compound semiconductor layer, or a laminate structure of palladium layer/nickel layer where a palladium layer comes into contact with the second compound semiconductor layer.
另外，在包括上述优选形式的具有第一配置或第二配置的锁模半导体激光装置中，第二电极可由钯层/铂层的分层结构构成，其中，钯（Pd）单层、镍（Ni）单层、铂（Pt）单层和钯层与第二化合物半导体层接触，或可由钯层/镍层的分层结构构成，其中，钯层与第二化合物半导体层接触。
In the mode-locked semiconductor laser device 10 in Embodiment 1 or Embodiment 2 to Embodiment 4 described later, the internal loss is suppressed in a range where internal quantum efficiency is not reduced such that the p-type AlGaN electron barrier layer 52, the p-type GaN/AlGaN superlattice clad layer 53, and the p-type GaN contact layer 54, which are Mg doped compound semiconductor layers, do not overlap the third compound semiconductor layer 40 and a light density distribution generated from the vicinity thereof.
在实施例1或下文所述的实施例2至实施例4中的锁模半导体激光装置10中，在没有降低内量子效率的情况下抑制了内部损耗，因此，属于Mg掺杂化合物半导体层的p型AlGaN电子阻挡层52、p型GaN/AlGaN超点阵包覆层53和p型GaN接触层54不与第三化合物半导体层40及其周围生成的光密度分布重叠。
Here, in Embodiment 1 or Embodiment 2 to Embodiment 4 described later, the mode-locked semiconductor laser device 10 has a laminate structure formed by sequentially laminating a first compound semiconductor layer 30 made of a GaN based compound semiconductor and having a first conductivity type; a third compound semiconductor layer (active layer) 40 made of the GaN based compound semiconductor; and a second compound semiconductor layer 50 made of the GaN based compound semiconductor and having a second conductivity type different from the first conductivity type.
此处，在实施例1或下文所述的实施例2至实施例4中，锁模半导体激光装置10可具有分层结构，所述分层结构通过按顺序层叠第一化合物半导体层30、第三化合物半导体层（有源层）40和第二化合物半导体层50而构成，第一化合物半导体层30由GaN基化合物半导体制成，具有第一导电类型；第三化合物半导体层（有源层）40由GaN基化合物半导体制成；第二化合物半导体层50由GaN基化合物半导体制成，具有不同于第一导电类型的第二导电类型。
The strengthen layer of load-bearing surface of planet wheel axle by laser hardening was studied.
对行星轮轴的承载表面激光淬火后的强化层进行了分析和研究。
A carrier substrate is thereafter attached to the laser-ablative adhesive layer.
载体衬底随后连附到激光烧蚀粘合层。
Another sophisticated application layer is removed by a high-energy density laser marking the launch vehicle plates or electronic keyboard backlighting handles and buttons.
另外一个精密的层移除应用是用高能量密度的激光标刻汽车发动板或电子键盘中的背光照明手柄和按键。
The marking is produced by removing the anodized layer on the aluminum using a laser.
通过使用激光去除铝上的阳极氧化层来产生标记。
A protection layer applied to the edge of the load zone by means of laser metal deposition is sufficient.
在承受负荷区域的边缘利用熔覆工艺涂敷一个保护层就已经足够。
Astronomers have found the sodium layer to be useful for creating an artificial laser guide star in the upper atmosphere.
天文学家发现钠层可以在某些条件下用作在上层大气层产生人工激光导引星。
Color or material removal creates different marking effects on aluminum. Laser removes parts of or the complete anodized top layer.
颜色或材料去除 会对铝产生不同的打标效果。激光去除部分或完全阳极氧化的顶层。
Vaporize protective film layer prior to laser cutting
在激光切割之前先蒸发保护膜层
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