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buffer layer
Definition
Translation of "buffer layer" in Chinese
Definition NEW
缓冲层
缓冲减震层
The buffer layer in the packaging safeguarded fragile items during shipping.
包装中的缓冲层在运输途中很好地保护了易碎物品。
A buffer layer is provided on the sapphire substrate by forming gallium nitride semiconductor layer at a low temperature.
且在蓝宝石基板上低温形成氮化镓半导体层而用来作为缓冲层。
The sapphire substrate has a gallium nitride semiconductor layer formed thereon under a low temperature to make a buffer layer.
且在蓝宝石基板上在低温下形成氮化镓半导体层来作为缓冲层。
Mainly by the tire tread, ply, buffer layer and bead composition. Tyre according to the structure (i.e. cord in the carcass orientation) (as shown below) can be divided into the following two: common bias tire, radial tire.
外胎主要由胎面、帘布层、缓冲层和胎圈组成。轮胎按其结构（也即胎体中帘线排列方向）的不同（如下图所示），可以分为以下两种：普通斜交轮胎、子午线轮胎。
The first conductive layer 112a, the emitting layer 114a and the second conductive layer 116a may be formed using, e.g., metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy, hydride vapor phase epitaxy, molecular beam epitaxy and/or metal organic vapor phase epitaxy, etc. By forming the second block pattern 106, the buffer layer 104 may be used as a seed layer and the first conductive layer 112a, the emitting layer 114a and the second conductive layer 116a may be formed using, e.g., lateral epitaxial overgrowth (LEO).
第一导电层112a、发射层114a和第二导电层116a可以使用例如金属有机化学气相沉积（MOCVD）、液相外延、氢化物气相外延、分子束外延和/或金属有机气相外延等形成。 通过形成第二阻断图案（block pattern）106，缓冲层104可以用作籽晶层，第一导电层112a、发射层114a和第二导电层116a可以使用侧向外延生长（LEO）来形成。
More specifically, the material of the metal buffer layer 130 may be a material having electronegativity similar to of Si or a material in which there is a relatively small difference between electronegativity of the material and electronegativity of Si.
更具体而言，金属缓冲层130的材料可以是电负值与Si的电负值类似的材料，或者是电负值与Si的电负值之间存在相对小的差异的材料。
In this respect, it will be appreciated that SFs are two-dimentional crystal defects (portions of crystal planes), whereas dislocations are one-dimensional crystal imperfections, i.e. line defects. These two types of defects are therefore different. The growth of SFs in operating SiC devices requires a combination of minority carrier injection and of a proper seed, such as a BPD. As there is a certain probability for minority carrier diffusion through the buffer layer down to the substrate, where the BPDs are abundant, the growth of a stacking fault may then proceed from the substrate, through the DTL and into the collector region, thereby degrading the BJT performance. The inventor has recognized that a mere removal of the BPDs from the collector layer does not eliminate the growth of SFs.
在这方面，应理解的是，SF为二维晶体缺陷（晶面部分），而位错为一维晶体不完整性，即，线缺陷。因此，这两种类型的缺陷不同。SiC装置运行过程中SF的生长要求将少数载流子注入与适当种子（例如BPD）组合。由于少数载流子在一定程度上可能通过缓冲层扩散到有大量BPD的衬底中，堆垛层错可从衬底通过DTL生长到集电极区域内，从而降低BJT性能。本发明的发明人认识到，仅从集电极层中去除BPD无法消除SF的生长。
A gallium nitride semiconductor layer is formed on the sapphire substrate to form a PN junction via a buffer layer of GaN, AlN, etc. The gallium nitride semiconductor has N type conductivity under the condition of not doped with any impurity, although in order to form an N type gallium nitride semiconductor having desired properties (carrier concentration, etc.) such as improved light emission efficiency, it is preferably doped with N type dopant such as Si, Ge, Se, Te, and C. In order to form a P type gallium nitride semiconductor, on the other hand, it is preferably doped with P type dopant such as Zn, Mg, Be, Ca, Sr and Ba.
经由 GaN、AlN 等的缓冲层将 PN 接合形成于此蓝宝石基板上，而以此方式形成氮化钆半导体层。氮化钆系列半导体就在不掺杂不纯物状态下呈 N 型导电性，为了形成具有所要提供发光效率的特性（载体浓度等）的 N 型氮化钆半导体，最好以 Si、Ge、Se、Te、C 等作为 N 型掺杂剂来进行适宜的掺杂。另一方面，为了形成 P 型氮化钆半导体，则最好掺杂 Nn、Mg、Be、Ca、Sr 和 Ba 等。
Key words: Solid state battery garnet electrolyte PEO buffer layer Cathode/electrolyte interface resistance
中文关键词： 固态电池 石榴石型电解质 PEO缓冲层 正极/电解质界面电阻
Although, in the mode-locked semiconductor laser device, a variety of GaN based compound semiconductor layers constituting the mode-locked semiconductor laser device are sequentially formed, here, as a substrate, in addition to the sapphire substrate, a GaAs substrate, a GaN substrate, an SiC substrate, an alumina substrate, a ZnS substrate, a ZnO substrate, an AIN substrate, a LiMgO substrate, a LiGa02 substrate, a MgAl204 substrate, an InP substrate, a Si substrate, or a substrate where a ground layer or a buffer layer is formed on a surface (main surface) of such substrate, may be used.
在锁模半导体激光装置中，按顺序形成了构成锁模半导体激光装置的各种GaN基化合物半导体层，但在本文中，除蓝宝石衬底之外，还可使用GaAs衬底、GaN衬底、SiC衬底、氧化铝衬底、ZnS衬底、ZnO衬底、AlN衬底、LiMgO衬底、LiGaO2衬底、MgAl2O4衬底、InP衬底、Si衬底，或在这些衬底的表面（主表面）上形成贴地层或缓冲层的衬底作为衬底。
Here, other than a sapphire substrate, examples of the substrate may include, a GaAs substrate, a GaN substrate, a SiC substrate, an alumina substrate, a ZnS substrate, a ZnO substrate, an AlN substrate, a LiMgO substrate, a LiGaO2 substrate, a MgAl2O4 substrate, an InP substrate, a Si substrate, and the foregoing substrates each provided with an underlayer, a buffer layer, etc. formed on a surface (main surface) thereof.
此处，除蓝宝石衬底之外，衬底的示例还可包括GaAs衬底、GaN衬底、SiC衬底、氧化铝衬底、ZnS衬底、ZnO衬底、AlN衬底、LiMgO衬底、LiGaO2衬底、MgAl2O4衬底、InP衬底、Si衬底、分别设有形成于其表面（主表面）上的底层和缓冲层的上述衬底。
Features: Material: Shield body is made of aviation aluminum Buffer Layer: EVA foam The shield T stick body× 1 9-packed marker ball straight funnel× 1 9-packed Rubber Ball Straight Funnel×...
产品特点： 材质：盾体采用航空铝材 缓冲层：EVA泡棉 盾牌前端可发射弹丸，发射弹丸种类可根据需要 选择辣椒弹、橡胶弹、染色弹、催泪弹 弹夹容弹数7发 使用12gC02抛弃式气瓶
The characteristics of general tire cord fabric layer and buffer layer of each adjacent layer cord cross arrangement, each layer of cord and tire crown center line into the 350~400 angle, so called bias tire. Between plies and tread as buffer layer.
普通斜交轮胎的特点是帘布层和缓冲层各相邻层帘线交 排列，各层帘线与胎冠中心线成350~400的交角，因而叫斜交轮胎。在帘布层与胎面之间为缓冲层。
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