A method for patterning by photolithography using a phase shift mask, characterized in that a phase shift mask according to one of claims 1 to 6 is used.
Verfahren zum Bemustern durch Photolithographie unter Benutzung einer Phasenverschiebungsmaske, dadurch gekennzeichnet, daß eine Phasenverschiebungsmaske gemäß einem der Ansprüche 1 bis 6 benutzt wird.
Method for patterning metallo-organic precursor film and film products.
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