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complementary transistors

Examples with "complementary transistors" and their translation in Chinees

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Alternatively, inverters can be constructed using two complementary transistors in a CMOS configuration.
另外,反相器可以用两个互补晶体管配置成CMOS反相器。

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The present invention reveals a method for producing straining silicon complementary metal oxide semiconductor transistor.
本发明揭示了一种制作应变硅互补金属氧化物半导体晶体管的方法。
Silicon complementary PNP transistor. General purpose high gain amplifier.
硅互补PNP晶体管。通用高增益放大器。
Silicon complementary PNP transistor. Audio amplifier output.
硅互补PNP晶体管。音频放大器的输出。
Silicon complementary PNP transistor. Darlington power amplifier.
硅互补PNP晶体管。达林顿功放。
NPN silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications.
达林顿NPN硅功率晶体管。互补音频输出级和一般的放大器和开关应用单片达林顿晶体管电路外延基地。
The diaphram 33, the fixed electrode 31, and inorganic dielectric film 32 forming the microphone are manufactured using micromachining technology of silicon and manufacturing process technology of CMOS (complementary field-effect transistor).
使用硅微加工技术和CMOS(互补场效应晶体管)制造工艺技术来制造形成麦克风的振动膜33、固定电极31以及无机介电膜32。
Both devices feature a Bridge-Tied Load (BTL) output with complementary PNPNPN output transistors.
配备补充 PNPNPN 输出晶体管,这两个设备均具有桥接负载 (BTL) 输出功能。
Based on logic gates of complementary single-electron transistor (SET), three units are proposed as follows: full adder, shift register and ROM.
基于互补型单电子晶体管(SET)逻辑门,提出了SET加法器、移位寄存器和ROM的单元电路。
Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.
在传统互补式金氧半薄膜电晶体的应用上,双极性传输是一基本且重要的特性。
FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor (CMOS).
FPGA使用的材料是互补式金属氧化物半导体 (CMOS) 技术,这是种随处可见的电晶体技术。
The manufacture of complementary metal-semiconductor image sensor includes forming isolating layer on the substrate to separate the substrate into photodiode sensing area and transistor element area
一种互补式金氧半导体影像传感器的制造方法,此方法是在基底中形成隔离层,以将基底区隔为光二极管感测区以及晶体管元件区。
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