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微处理
One reason is that innovations in display, battery and microprocessing technologies have greatly reduced their cost.
Since it is difficult to apply the dry etching method, which is frequently used for forming an Al alloy wire, to Cu for microprocessing, the so-called damascene process is mainly adopted for Cu, in which a Cu film is deposited on a dielectric film to which groove processing has been provided and then the Cu film is removed except in portions where the Cu film is embedded inside a groove by chemical-mechanical polishing (CMP) to form an embedded wire.
When a film having tensile stress equivalent to tensile stress of an upper layer of the sensor is added to a lower layer of the sensor, the tensile stress can be larger than remnant stress of a setting value of the heater, and thus deflection in the diaphragm including the sensor portion underwent a microprocessing is prevented so that a thermal fluid flow sensor having a high accuracy and small resistance fluctuation is provided.
In recent years, with ever higher integration and higher performance of semiconductor integrated circuits (LSI), new microprocessing technologies have been developed.
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