Examples with "patterned mask" and their translation in Chinees
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The sample with the patterned mask can be put into a vacuum system and etched by the bombardment of a beam of atoms, molecules, or ions.
具有图案化掩模的样品能够被放入真空系统中且通过原子束、分子束或离子束的轰击而被蚀刻。
After forming the blanket conductive trace layer 80, a patterned mask 82 having openings therein which expose the trace layer 80 is formed over the surface of the trace layer 80.
In addition to the light-transmitting release paper or liner, in order to irradiate light only on a selected portion of the sheet, a light-shielding patterned mask may also be used.
除透光脱膜纸或衬垫之外,为使光仅照射片之选定部分之上,亦可使用遮光图案化遮罩。
After forming a sheet by disposing the mixture between the release liners, light may be irradiated onto the mixture through a light-shielding patterned mask in a chamber in which oxygen is substantially eliminated, for example, a chamber in which the density of oxygen is about 1000 ppm or less.
The upshot is that you can write on Dr Grzybowski's paper (using a pen that emits ultraviolet light) or print on it (using a patterned mask through which such light is shone).
结果便是你能在Grzybowski博士的纸上使用放射紫外线的笔书写或是用放射紫外线的磨具印刷。
Andere resultaten
Common details also include leopard prints and patterned dental masks.
一些常见的细节包括豹纹图案和牙齿面具图案。
A novel metal micro-parts fabrication technology was presented herein. The anode which also served as a mask was patterned by UV lithography, and used to confine the region of electrodeposition.
The insulating layer 33 is preferably patterned by, for example, a laser beam machining technique or a process of using a shadow mask to selectively form a pattern.
优选地,通过例如激光束加工技术或使用荫罩来有选择地形成图案的处理来对绝缘层33构图。
As such, since the ridge stripe structure is formed in a self-alignment manner using the second electrode 62 which is patterned in a strip shape as an etching mask, there is no occurrence of misalignment between the second electrode 62 and the ridge stripe structure.
Subsequently, in action 33, the beam of radiation is imparted with a pattern in its cross-section by a patterning device, e.g. a mask, to form a patterned beam of radiation.
Such a manufacturing method is adopted, specifically, part or all of the second compound semiconductor layer is etched with the use of the second electrode as the etching mask to form the ridge stripe structure, in other words, the ridge stripe structure is formed by a self-alignment scheme with the use of the patterned second electrode as the etching mask.
Since the ridge stripe structure 56 is formed by a self-alignment scheme with the use of the patterned second electrode 62 as the etching mask in such a manner, misalignment between the second electrode 62 and the ridge stripe structure 56 is not caused.
In addition, by employing the manufacturing method, that is, since a part of the second compound semiconductor layer is etched using the strip-shaped second electrode as an etching mask so as to form the ridge stripe structure, that is, the ridge stripe structure is formed in a self-alignment manner using the patterned second electrode as an etching mask, there is no misalignment between the second electrode and the ridge stripe structure.
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