Examples with "see patterned" and their translation in Chinees
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I see patterned tablecloths, and China figurines and lace doilies.
我看见了有图案的桌布 还有,哦,瓷器雕塑 还有,哦,蕾丝桌垫
Andere resultaten
Use the online Design Configurator to try out different patterned glass and leather design elements in combination with a TANDEMBOX intivo pull-out. You can immediately see what your finished pull-out will look like.
In the summer and in the winter I shall walk up and down the patterned garden paths in my stiff brocaded gown The squills and daffodils... And the softness of my body will be guarded from embrace By each button, hook, and lace I see so much of myself when I look at you.
Lilith's story touched all of us, including Pam, an attendee who was a quilt maker. Pam had just finished a gorgeous, intricately-patterned quilt, and had brought it with her. She, along with a few of the leaders, decided to give it to Lilith as a symbol of their comfort and love. Lilith had left her own mother behind in her homeland, and I can't imagine how frightened and alone she felt. But in her absence I could see there were lots of "mamas" in this community of women who were more than ready to love on her.
First, as shown in FIG. 27A, the oxide semiconductor film 1012 made of the above-described material is formed on the substrate 1011. Specifically, an oxide semiconductor material film (not illustrated) is formed on an entire surface of the substrate 1011, for example, to a thickness of about 50 nm by a method such as sputtering. A ceramic with a composition same as that of the oxide semiconductor to be formed in a film is used as a target upon this sputtering. Further, partial pressure of oxygen is so controlled as to obtain preferable transistor characteristics since carrier density in the oxide semiconductor largely depends on the partial pressure of oxygen upon sputtering. At this time, it is possible to improve etching selectivity upon etching of the insulating film 1013A (see later-described FIG. 27B) and the high resistance film 1015 by using the crystalline oxide semiconductor material as described above. Subsequently, the formed oxide semiconductor material film is patterned in a predetermined shape, for example, by photolithography and etching. At that time, it is preferable to process the formed oxide semiconductor material film by wet etching with use of mixture of phosphoric acid, nitric acid, and acetic acid. The mixture of phosphoric acid, nitric acid, and acetic acid allows selection ratio with an underlayer to be sufficiently large and allows relatively-easy process.
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