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static random access memory
Definitie
Vertaling van "static random access memory" in Chinees
Definitie
静态随机存取存储器
静态随机存取记忆体
radiation hardened thin film SOI wafers are used for fabricating radiation hardened ultra-large-scale digital devices such as microprocessors, application specific integrated circuits, and static random access memory
防辐射薄膜硅绝缘体晶片是用来制造诸如微处理机、专用集成电路和静态随机存取存储器这样一些防辐射的超大规模数字设备的材料
Cypress offers a family of high-speed, high-performance NonVolatile Static Random Access Memory (NVSRAM) products that combine the performance characteristics of a highspeed SRAM with that of a nonvolatile cell.
Cypress 提供一系列高速、高性能非易失性静态随机存取存储器 （NVSRAM） 产品，它们具高速 SRAM 的性能特性，同时又兼具非易失性单元。
SRAM (Static Random Access Memory): RAM which typically consists of one flip-flop per bit of memory.
SRAM（静态随机存取记忆体 ） ： 这是一个典型的羊筋斗，掉落的每一点记忆.
Pseudo SRAM (Static Random Access Memory) consists of a DRAM macro core with a traditional SRAM interface; an on-chip refresh circuit that frees the user from the need to take care of this task. Comparing to traditional CMOS SRAM, PSRAM has advantage in higher density, higher speed, smaller die size...
PSRAM（虚拟静态随机存取记忆体）是由一个DRAM主体核心与传统SRAM介面所组成。晶片上的刷新电路，可省略使用者需要记忆体刷新的考量。相对于传统的CMOS SRAM，PSRAM具有更高容量，高速度，更小的晶片尺寸，以及与DRAM相容的优势。 附注： 如果有KGD的需求， 请连络我们
The Phase I grant supported a six-month effort to develop a low-power 'green' battery with a 30-plus year shelf life that will power a SRAM (static random access memory) circuit for a computer device.
阶段I合同为期6个月，开发一个低功率"绿色"电池，附带30年保存期限，为计算机设备SRAM（静态随机存取内存）电路提供动力。
The processing unit 110 may be configured to perform an iterative downlink process for resource elements mapping on a pipe of orthogonal frequency division multiplexed (OFDM) symbols. In one example, the processor 110 may implement hardware to perform 5 the downlink processing in accordance with the present invention. In another example, the downlink processing in accordance with the present invention may be performed by software executed on the processing unit 110. In one example, the software for performing the downlink processing in accordance with the present invention may be written to a Flash memory or other nonvolatile memory {e.g., programmable read only memory (PROM), erasable programmable read only memory (EPROM), electrically erasable programmable read only memory (EEPROM), bubble memory, disk or disc media, etc.). Additionally, even volatile memory, such as dynamic random access memory (DRAM) or static random access memory (SRAM), may be used. For example, the software may be loaded from a non-volatile storage medium at power-up.
所述处理单元110可用于对在管道上映射正交频分复用（OFDM）符号的资源单元进行迭代下行链路过程。在一个示例中，所述处理器110可采用硬件进行根据本发明的下行链路处理。在另一个示例中，根据本发明的下行链路处理可由处理单元110运行的软件进行。在一个示例中，用于进行根据本发明的下行链路处理的软件可写入闪存或其他非易失性存储器（例如，可编程只读存储器（PROM）、可擦可编程只读存储器（EPROM）、电可擦可编程只读存储器（EEPROM）、磁泡存储器、磁盘或磁盘媒体等）。另外还可使用易失性存储器，例如动态随机存取存储器（DRAM）或静态随机存取存储器（SRAM）。例如，可在启动时从非易失性存储介质中加载软件。
The memory 106 and 136 is defined herein as including both volatile and nonvolatile memory and data storage components. Volatile components are those that do not retain data values upon loss of power. Nonvolatile components are those that retain data upon a loss of power. Thus, the memory 106 and 136 may comprise, for example, random access memory (RAM), read-only memory (ROM), hard disk drives, solid-state drives, USB flash drives, memory cards accessed via a memory card reader, optical discs accessed via an optical disc drive, and/or other memory components, or a combination of any two or more of these memory components. In addition, the RAM may comprise, for example, static random access memory (SRAM), dynamic random access memory (DRAM), or magnetic random access memory (MRAM) and other such devices. The ROM may comprise, for example, a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or other like memory device.
所述存储器106和136在本文中限定为包括易失性和非易失性存储器和数据存储部件。易失性部件为不保留功率损耗的数据值的部件。非易失性部件为保留功率损耗的数据的部件。因此，所述存储器106和136可包括，例如，随机存取存储器（RAM）、只读存储器（ROM）、硬盘驱动器、固态驱动器、USB闪存驱动器、通过存储器读卡器存取的存储卡、通过光盘驱动器存取的光盘，和/或其他存储部件，或这些存储部件的任何两个或多个的组合。另外，所述RAM可包括，例如，静态随机存取存储器（SRAM）、动态随机存取存储器（DRAM）或磁性随机存取存储器（MRAM）和其他这种装置。所述ROM可包括，例如，可编程只读存储器（PROM）、可擦可编程只读存储器（EPROM）、电可擦可编程只读存储器（EEPROM），或其他相似存储装置。
A 32KB Static Random Access Memory (SRAM), which is widely used at present in VLSI, is designed in this paper.
目前，片上集成存储器一般采用静态结构，本文设计了一款32KB容量的静态随机存储器（SRAM）。
The computer-readable medium can comprise any one of many physical media such as, for example, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor media. More specific examples of a suitable computer-readable medium would include, but are not limited to, magnetic tapes, magnetic floppy diskettes, magnetic hard drives, memory cards, solid-state drives, USB flash drives, or optical discs. Also, the computer-readable medium may be a random access memory (RAM) including, for example, static random access memory (SRAM) and dynamic random access memory (DRAM), or magnetic random access memory (MRAM). In addition, the computer-readable medium may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or other type of memory device.
另外，本文所述的任何逻辑、服务或应用，包括包括软件或代码的电源管理服务154，可在用于指令执行系统（例如，PMU 130中的微控制器133或其他系统）或与其连接的任何非瞬态计算机可读介质中实施。这样，所述逻辑可包括（例如）语句，所述语句包括可从计算机可读介质中提取，并由指令执行系统执行的指令和声明。在本发明的场境中，"计算机可读介质"可为可包含、存储或保留本文所述的用于指令执行系统或与其连接的逻辑或应用的任何介质。所述计算机可读介质可包括多种物理介质的任何一种，例如，电子、磁性、光学、电磁、红外或半导体介质。适用计算机可读介质的更具体示例包括，但不限于，磁带、软磁盘、硬磁盘驱动器、存储卡、固态驱动器、USB闪存驱动器或光盘。另外，所述计算机可读介质可为随机存取存储器（RAM），包括，例如，静态随机存取存储器（SRAM）、动态随机存取存储器（DRAM）或磁性随机存取存储器（MRAM）。另外，所述计算机可读介质可为只读存储器（ROM）、可编程只读存储器（PROM）、可擦可编程只读存储器（EPROM）、电可擦可编程只读存储器（EEPROM）或其他类型的存储装置。
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