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transfer random access memory
Examples with "transfer random access memory" and their translation in Chinees
The memory cell in FIG. 2 has a spin-torque transfer random access memory (STRAM) configuration with a magnetic tunneling junction (MTJ) 110, although other cell configurations can be used.
图2中的存储单元具有带磁性隧道结（MTJ）110的自旋力矩转移随机存取存储器（STRAM）结构，尽管也可使用其它单元结构。
The memory cells 224 can be spin torque transfer random access memory (STRAM) or resistive random access memory (RRAM) cells.
存储元件224可以是自旋力矩转移随机存取存储器（STRAM）或阻性随机存取存储器（PRAM）元件。
Non-volatile memory can provide persistent information by retaining stored information when not powered and can include NAND flash memory, NOR flash memory, read only memory (ROM), Electrically Erasable Programmable ROM (EEPROM), Erasable Programmable ROM (EPROM), phase change random access memory (PCRAM), resistive random access memory (RRAM), and magnetic random access memory (MRAM), such as spin torque transfer random access memory (STT RAM), among others.
非易失性存储器可通过在不供电时保留所存储的信息来提供持久信息且可包含NAND快闪存储器、NOR快闪存储器、只读存储器（ROM）、电可擦除可编程ROM（EEPROM）、可擦除可编程ROM（EPROM）、相变随机存取存储器（PCRAM）、电阻式随机存取存储器（RRAM），和磁性随机存取存储器（MRAM）（例如，白旋力矩传递随机存取存储器（STT RAM）），以及其它存储器。
Andere resultaten
This Summary is provided to introduce the simplified concepts for devices and methods used to implement a Spin-Transfer Torque Magnetoresistive random access memory (STT-MRAM) cell.
提供本发明内容以介绍用来实现自旋转移力矩磁阻式随机存取存储器（STT-MRAM）单元的装置和方法的简化概念。
transmitting a first current through a spin torque transfer magnetic random access memory cell in a first direction to program the memory cell with a first value
在第一方向上传输第一电流穿过自旋力矩转移磁性随机存取存储器单元，以用第一值对所述存储器单元进行编程；
transmitting a second current through the spin torque transfer magnetic random access memory cell in the first direction to program the memory cell with a second value, wherein the second value is different from the first value.
在所述第一方向上传输第二电流穿过所述自旋力矩转移磁性随机存取存储器单元，以用第二值对所述存储器单元进行编程，其中所述第二值不同于所述第一值。
selecting a first parameter based on a first predetermined design constraint of a spin torque transfer magnetoresistive random access memory (STT-MRAM)
基于自旋力矩转移磁阻随机存取存储器（STT-MRAM）的第一预定设计约束选择第一参数；
An apparatus for protecting data during power-up of a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, comprising
一种用于在自旋转移力矩磁阻随机存取存储器（STT-MRAM）阵列的加电期间保护数据的设备，其包含：
Accordingly, an embodiment of the invention includes a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM), comprising
因此，本发明的一实施例包括自旋转移力矩磁阻随机存取存储器（STT-MRAM），其包含：
One type of MRAM is a spin transfer torque random access memory (STT-RAM).
一种MRAM是自旋转移力矩随机存取存储器（STT-RAM）。
More particularly, embodiments of the invention are related to data protection during power-up in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM).
更明确地说，本发明的实施例与自旋转移力矩磁阻随机存取存储器（STT-MRAM）中加电期间的数据保护有关。
A computer-readable medium including program code stored thereon for protecting data during power-up of a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, comprising
一种计算机可读取媒体，其包括存储于其上用于在自旋转移力矩磁阻随机存取存储器（STT-MRAM）阵列的加电期间保护数据的程序代码，所述计算机可读取媒体包含：
FIG. 8 is a flow diagram of a particular embodiment of a method 800 of reducing a source loading effect of a spin torque transfer magnetoresistive random access memory (STT-MRAM).
图8为降低自旋力矩转移磁阻性随机存取存储器（STT-MRAM）的源极负载效应的方法800的特定实施例的流程图。
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Resultaten: 344. Exact: 3. Verstreken tijd: 47 ms.
