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電流制御素子
The breakdown current of the current control element (50) is greater than the initial breaking current to flow through the resistance changing element (14) upon initial breaking.
Provided is a current control element that is able to prevent the occurrence of a write disturb even when electrical pulses with different polarities are applied, and that is able to apply a large current to a variable resistance element.
[MEANS FOR SOLVING PROBLEMS] A light emitting diode lighting apparatus (1) is provided with a light emitting diode row (18) wherein a plurality of light emitting diode elements (16) are connected in series, and a constant current control element (20) connected in series to the light emitting diode row (18).
The current control element (50) is provided with an MSM diode (1) and an MSM diode (2) that are connected in series, and each of which has a bidirectional rectifying characteristic with respect to an applied voltage.
CURRENT CONTROL ELEMENT AND NONVOLATILE MEMORY ELEMENT USING SAME
電流制御素子及びこれを用いた不揮発性記憶素子
CURRENT CONTROL ELEMENT, MEMORY ELEMENT, MEMORY DEVICE, AND PRODUCTION METHOD FOR CURRENT CONTROL ELEMENT
電流制御素子、記憶素子、記憶装置および電流制御素子の製造方法
Disclosed is a battery assembly comprising: a plurality of mutually parallel-connected battery units which respectively have a cell group in which one or two or more secondary battery cells are connected in series and have a first current control element connected in series with the cell group; first control means which controls the charging/discharging current of each of the battery units, by controlling the operation of the first current control elements of the respective battery units; voltage measurement means which measures the voltages of the cell groups or each of the cells of the respective battery units; and diagnosis means which diagnoses the degree of deterioration or malfunction of the battery units, in accordance with the voltages of the cell groups or each of the cells measured by the voltage measurement means.
The cross-point memory is provided with a readout circuit comprising the following: a reference voltage generation circuit (6) formed from at least the current control element (29); a differential amplifier circuit (7) that performs current amplification on the output voltage of the reference voltage generation circuit (6); a feedback-type bit line voltage clamp circuit (8) that raises and sets the low voltage-side reference voltage by the output of the differential amplifier circuit; and a sense amplifier circuit (9) that determines the prescribed resistance state of the resistance change element of a selected memory cell (30) according to the amount of current flowing through the selected memory cell (30).
The nonvolatile memory element is provided with a current control element (112) having nonlinear current-voltage characteristics; a resistance variation element (105) wherein a resistance state is reversibly shifted between a low-resistance state and a high-resistance state having a resistance value higher than that of the low-resistance state on the basis of a voltage pulse to be applied; and a fuse (103).
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Synoniemen voor current control element in het Engels