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元素含有
素子収納用
A transparent conductor which comprises a conductive layer that is formed of a metal material having a thickness of 15 nm or less and a platinum group element-containing layer that contains Pt and/or Pd. If the optical admittance of the admittance adjusting layer-side interface of the conductive layer at a wavelength of 570 nm is expressed as Y1 = x1 + iy1 and the optical admittance of another interface of the conductive layer at a wavelength of 570 nm, said another interface being on the reverse side of the admittance adjusting layer-side interface, is expressed as Y2 = x2 + iy2, x1 and/or x2 is 1.6 or more.
Disclosed is a method for producing a lithium silicate compound, which is characterized in that a lithium silicate compound represented by Li2SiO3 and a transition metal element-containing substance that contains at least one element selected from the group consisting of iron and manganese are caused to react with each other at 550˚C or less in a molten salt that contains at least one substance selected from the group consisting of alkali metal nitrates and alkali metal hydroxides in a mixed gas atmosphere that contains carbon dioxide and a reducing gas.
An element-containing package based on one of the aspects of the present invention is provided with: a metal substrate, the top surface of which has a placement region in which a semiconductor element is placed; a frame provided on the top surface of the metal substrate so as to surround said placement region; an I/O member that is inserted between the metal substrate and the frame and comprises a ceramic substrate and a plurality of wiring conductors provided on the top surface of said ceramic substrate; and a brazing material that is located between the metal substrate and the I/O member and joins said metal substrate and I/O member.
This semiconductor layer production method is provided with: a step for forming a film containing a single source complex which contains a I-B group element, a gallium element, and a chalcogen element-containing organic compound; a step for heating the film in an atmosphere containing water and thermally decomposing an organic component in the film to form a thermal decomposition film; and a step for heating the thermal decomposition film to produce a semiconductor layer containing a I-III-VI group compound.
An insulator containing a magnetic element capable of effectively increasing permeability without comparatively increasing the mixture concentration of magnetic elements, and enhancing characteristic impedance by applying a magnetic element-containing insulator thus obtained to a circuit board, and providing a low power consumption effect; and a circuit board and an electronic apparatus using it.
The magnetic element-containing insulator (10) comprises a plurality of magnetic element particles (1a, 1b) and insulators (2) holding the plurality of magnetic element particles (1a, 1b), wherein the magnetic element particle groups are composed of at least a plurality of particle sizes.
The negative electrode active material layer contains: negative electrode active material particles that are composed of at least a carbon material or a lithium-containing metal oxide; and metal element-containing particles that are composed of an alkali metal, an alkaline earth metal, a transition metal belonging to the fourth row of the periodic table, an oxide of any one of the above-mentioned metals, or a compound of any one of the above-mentioned metals and a nonmetallic element.
The method for purification of silicon is a method for purifying molten silicon (8) containing impurity elements and comprises, in one aspect, a step of bringing a purification gas containing a component reactive with the impurity elements into contact with the molten silicon (8) to remove an impurity element-containing product from the molten silicon (8) and a step of bringing a treatment gas having a low level of reactivity with the molten silicon (8) into contact with the molten silicon (8) to remove the product of the reaction between the molten silicon (8) and the purification gas.
[MEANS FOR SOLVING PROBLEMS] Provided is a method for inspecting whether a metal element-containing foreign material is adhered on a substrate to be used for a liquid crystal display apparatus.
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