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パターン形成工程
The method includes a pattern formation step whereby a pattern is formed by printing the aforementioned diffusion agent composition onto a semi-conductor substrate, and a diffusion step whereby the impurity diffusion component (A) in the diffusion agent composition is diffused onto the semi-conductor substrate.
The ratio of the width of the initial line to the opening width of the groove is set at 3:5, and the thin film is formed so that the ratio of the width of the thin film opening that corresponds to the groove to the thin film side wall width of a side wall portion covering the side wall of the line is 3:1 after the double pattern formation step of a first time, and 1:1 after that of a second time.
The present invention provides a pattern forming method which comprises, in the following order: (1) a resist underlayer film formation step wherein a resist underlayer film is formed on the upper surface of a substrate to be processed by applying a composition for forming a resist underlayer film thereto, said composition containing a resin that has a phenolic hydroxy group; (2) a resist pattern formation step wherein a resist pattern is formed on the upper surface of the resist underlayer film; (3) a pattern formation step wherein at least the resist underlayer film and the substrate to be processed are dry etched using the resist pattern as a mask, so that the substrate to be processed is patterned; and (4) a resist underlayer film removal step wherein the resist underlayer film on the substrate to be processed is removed by means of a basic solution.
The disclosed method includes: a first pattern formation step (S13) wherein a pattern which includes a second line section is formed by etching an antireflection film with a first line section as a mask, the first line section being formed from a photoresist film; an irradiation step (S14) wherein electrons are irradiated on the photoresist film; a silicon oxide film formation step (S15) wherein a silicon oxide film is formed; an etching step (S16) wherein the silicon oxide film is etched in a manner so as to remain as side wall sections of the second line section; and a second pattern formation step (S18) wherein a mask pattern is formed which is formed from the silicon oxide film, and which has a third line section remaining as the side wall section thereof, by means of ashing the second line section.
Disclosed are: a method for manufacture of a substrate with a septum for use in an ink-jet color filter, comprising the following steps: a photosensitive resin layer formation step in which a photosensitive resin composition comprising at least a photopolymerization initiatoror or a photopolymerization initiation system, a monomer and a binder is applied onto at least one surface of a substrate to form a photosensitive resin layer; a light exposure step in which the photosensitive resin layer formed on the substrate is exposed to light through a pattern; an image-development step in which the photosensitive resin layer is subjected to image development; and a septum pattern formation step in which a pattern for the septum is formed, wherein the amount of the residual solvent in the photosensitive resin layer is adjusted to 100 μL/m2 or less; the substrate; a color filter provided with the substrate; a method for manufacture of the color filter; and a liquid crystal display element.
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Synoniemen voor pattern formation step in het Engels