Vertaling van "resist pattern formation method using" in Japans
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用いるレジストパターン形成方法
Specifically disclosed are: a cyclic compound having a specific structure; a process for producing the cyclic compound; a radiation-sensitive composition containing the compound; and a resist pattern formation method using the composition.
Disclosed are: a cyclic compound which has high solubility in a safe solvent, is highly sensitive, enables the formation of a resist pattern having a good shape, and rarely causes resist pattern collapse; a process for producing the cyclic compound; a radiation-sensitive composition containing the cyclic compound; and a resist pattern formation method using the composition.
A polymerizable composition for a solder resist, comprising an infrared ray blocking material, a polymerization initiator and a polymerizable compound; and a solder resist pattern formation method using the polymerizable composition for a solder resist.
A resist composition containing a compound represented by general formula (1) or (2), a resist pattern formation method using said resist composition, a polyphenol compound used in the resist pattern formation method, and an alcohol compound capable of being derived from said polyphenol compound.
Disclosed are: a composition for forming a resist underlayer film for electron beam or EUV lithography, which can be used in a device manufacture process that employs electron beam or EUV lithography, is rarely subjected to the adverse effects of electron beam or EUV, and is effective for the formation of a good resist pattern; and a resist pattern formation method using the composition.
Disclosed are an alicyclic compound in which a cholic acid ester structure-containing group is bound to an adamantane skeleton, method for manufacturing the same, composition containing the same, and resist pattern formation method using the same, that provide an alicyclic compound which has superior solvent properties, light exposure sensitivity, resolution, roughness, and heat resistance, etc., and especially excellent dissolution inhibiting effect against development fluids, and is useful as a positive photoresist monomer or dissolution inhibitor used in semiconductor device fabrication, and that provide a method for manufacturing the same, composition containing the same, and resist pattern formation method using the same.
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