With this configuration, processing becomes easy in the case of using lithography in a patterning process, and the voltage value of the voltage pulse for changing the resistance value of the resistance variable element can be lowered.
In such a configuration, processing is facilitated when lithography is used in the patterning process, and thereby the voltage value of the voltage pulse which varies the resistance value of the resistance variable element can be lowered.
The structure facilitates manufacture of the variable resistance element using photolithography as a patterning process, thereby reducing a voltage value of a voltage pulse varying a resistance value of the variable resistance element.
Although the wiring pattern connected to the TFT device in the display area generally exists around the IC chip mounted area, when the formed pattern of the wiring pattern layout and the stress absorption region 6 are arranged suitably so as not be irradiated by the laser beam, the stress absorption regions 6 can be formed either after the wiring patterning process or after the IC chip mounting process without causing any problem.
We produce sacrificial layers in the lithographic patterning process, various dielectric materials and enabling hardmasks. Our silicon based anti-reflective coatings under photoresists facilitate patterning with KrF and ArF laser excimers (248 and 193nm). Our manufacturing excellence enables even sub 5ppb total trace metals which is a prerequisite for sub-10nm nodes.
NILT works with several LED companies and has great experience in making wafer sized NIL stamps or molds with sub-wavelenght dot patterns or photonic bandgap structures (PBG), used directly in a NIL process for patterning of LEDs or used as masters for making polymer NIL stamps. MICRO FLUIDICS
It controls our genetic patterning, our physical body, our predisposition to certain health conditions, our aging process, our metabolism and much more.
The manufacturing of TFT/LED technologies and storage media is structured in wafer cleaning and metallization steps, patterning and etching, mapped in typical applications such as process cooling water, neutralization and chemical distribution.
For a wide variety of applications, e.g. those requiring finer resolution, the preferred process comprises screen printing a paste which further comprises a photoinitiator and a photohardenable monomer, photo-patterning the dried paste and firing the resulting patterned paste.
Likewise, a transparent conductive film made of ITO or the like is formed on the transparent substrate 37 configured of a glass substrate or a plastic film substrate Next, a resist layer is formed on an entire surface of the transparent conductive film, and then an electrode pattern is formed on the resist layer by patterning Then, the upper electrode 36 is formed by exposure and development, and the resist layer is removed Next, after an entire surface of the upper electrode 36 is coated with the alignment film 35, the alignment film 35 is dried and fired After that, a rubbing process is performed on the alignment film 35 Therefore, the alignment film 35 functions as an alignment film for horizontal alignment, and a pretilt is allowed to be formed in a rubbing direction of the alignment film 35
Subsequently, any deposit on the back side of the substrate due to the CVD growth process may be removed using plasma etch. A normal manufacturing process may also include patterning and etching of the emitter region or mesa 236, patterning and etching of the base region or mesa 234, and forming the junction termination region 260 at the periphery of the base mesa 234, such as illustrated in Figure 2. Outline of the base mesa 234 may advantageously have sufficiently rounded edges to prevent electric field concentration at its periphery. The junction termination region 260 is intended to prevent the device from electric field concentration at the periphery, thereby preventing early breakdown. The junction termination region 260 may be formed by a number of techniques, such as for example the junction termination extension technique. Further, a ring with an accurately controlled acceptor dose may be formed at the periphery of the base mesa 234 by implantation of boron or aluminum ions into the device periphery, the acceptor dose corresponding to full depletion of the implanted region at approximately 50 to 70% of the theoretical breakdown voltage. The dose may advantageously be in the range of approximately 0.9x1013 to 1.2x1013 cm-2 for electrically active acceptors in the JTE region.
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Synonyms and analogies of "patterning process" in English