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动态随机存取
Niche dynamic random access memory
利基动态随机存取内存
The computing system of claim 1, where the host processor writes the encrypted code into dynamic random access memory (DRAM) from flash memory, the encrypted code including a first stage code and a second stage code for executing a two-stage boot process.
In the memory segment, smartphones have been upgrading memory content for better performance, which has helped drive demand for and pricing of dynamic random access memory (DRAM) chips.
Samsung was the sole profitable firm among major global dynamic random access memory (DRAM) chip makers in the third quarter.
在第三季度,三星公司是在全球动态随机存取记忆(DRAM)芯片制造商中唯一盈利的公司。
Memory Display type of dynamic random access memory
内存 显示型动态随机存取内存
a dynamic random access memory (DRAM) connected with the first CPU
与第一CPU连接的动态随机存取存储器(DRAM);
The ability to attain the required simulation rate at 1.2 μs was the decisive factor for adopting the NI FlexRIO platform for this system. Additionally, because the NI FlexRIO has a high-capacity, built-in dynamic random access memory, we could use the JMAG-RT model provided by JSOL Corp.'s JMAG software tool chain.
In an information processing device, a high-speed and high-density Dynamic Random Access Memory (DRAM) is widely used as a random access memory.
在信息处理装置中,广泛使用高速高密度动态随机存取存储器(DRAM)作为随机存取存储器。
To understand exactly how the consumption of power scales on newer generation servers using DDR3 technology DRAM (Dynamic Random Access Memory), the following results have been compiled for analysis.
DRAM (Dynamic Random Access Memory): RAM memory, which essentially consists of a tiny capacitor for each bit of memory.
DRAM(动态随机存取记忆体 ) : Ram记忆,这是由一个小小的电容器每一点记忆.
As previously described in FIG. 1, router 40 (e.g., packet gateway 14 of FIG. 1) may service packet flows for millions of subscribers. As the number of subscribers increases, storage resources of PFE 60 may be consumed by filters programmed in hardware for each subscriber. In some examples, storage resources may include high-speed storage such as Reduced-Latency Dynamic Random Access Memory (RLDRAM) or Ternary Content Addressable Memory (TCAM). Such high-speed storage may have limited storage capacity and in some cases is costly. Techniques of the present disclosure as further described in FIG. 3 may reuse existing filters in PFE 60, i.e., filters already installed within forwarding plane 81 for existing packet flows of currently connected subscribers, to minimize duplicate storage of filters for newly connected subscribers and, therefore, improve storage efficiency.
Samsung Electronics of Korea, which moved from licensing technology to being a full partner in a consortium with NEC of Japan and AT&T of the United States in the development of Dynamic Random Access Memories (DRAMs)
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