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work function difference between
Translation of "work function difference between" in Japanese
仕事関数差
仕事関数の差
Furthermore, two coexist phases of a metal phase and an insulator phase can be formed in the vicinity of the interface between the variable resistor and the first electrode by the work function difference between the first electrode and the variable resistor.
更に、第１電極と可変抵抗体の仕事関数差が、可変抵抗体の第１電極との界面近傍において金属相と絶縁体相の２相共存相を形成し得る仕事関数差となっている。
The present invention addresses the problem of providing an SGT having a structure in which a transistor is formed by the work function difference between a metal and a semiconductor.
トランジスタを金属と半導体との仕事関数差によって形成する構造を持つＳＧＴを提供することを課題とする。
By using a Ge-Sb-Te chalcogenide to which indium is introduced as the recording layer (52), the work function difference between the insulating film (51) and the recording layer (52) is increased, thereby reducing the programming voltage of the phase change memory.
そして、記録層（５２）としてインジウムを導入したＧｅ－Ｓｂ－Ｔｅ系カルコゲナイドを用いることで、絶縁膜（５１）と記録層（５２）の仕事関数差を大きくし、相変化メモリのプログラミング電圧を低減することができる。
In late 1967, Tom Klein, working at the Fairchild Semiconductor R&D Labs, and reporting to Les Vadasz, realized that the work function difference between heavily P-type doped silicon and N-type silicon was 1.1 volt lower than the work function difference between aluminum and the same N-type silicon.
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